Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Lohner Tivadar and Németh Attila and Zolnai Zsolt and Kalas Benjamin and Romanenko Alekszej and Nguyen Quoc Khánh and Szilágyi Edit and Kótai Endre and Agócs Emil and Tóth Zsolt and Budai Judit and Petrik Péter and Fried Miklós and Bársony István and Gyulai József: Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 152. ISSN 1369-8001 (2022)

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Item Type: Journal Article
Journal or Publication Title: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Date: 2022
Volume: 152
Number of Pages: 11
Publication identifier: 107062
ISSN: 1369-8001
Faculty/Unit: ELI-HU
Albert Szent-Györgyi Medical School
Faculty of Science and Informatics
Institution: Szegedi Tudományegyetem
Language: English
MTMT rekordazonosító: 33077841
DOI azonosító: https://doi.org/10.1016/j.mssp.2022.107062
Date Deposited: 2023. Jan. 17. 09:10
Last Modified: 2023. Jan. 17. 09:10
URI: http://publicatio.bibl.u-szeged.hu/id/eprint/26205
Web of Science® Times Cited: 2 View citing articles in Web of Science®

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