The Effect of Trap States on the Optoelectronic Properties of Nanoporous Nickel Oxide

Balog, Ádám, Janáky, Csaba: The Effect of Trap States on the Optoelectronic Properties of Nanoporous Nickel Oxide.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 166 (5). H3265-H3270. ISSN 0013-4651 (2019)

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Item Type: Article
Journal or Publication Title: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Date: 2019
Volume: 166
Number: 5
Page Range: H3265-H3270
ISSN: 0013-4651
Faculty: Faculty of Science and Informatics
Institution: Szegedi Tudományegyetem
SWORD language: angol
MTMT id: 30611020
DOI id: https://doi.org/10.1149/2.0361905jes
Date Deposited: 2019. Jul. 10. 14:24
Last Modified: 2019. Jul. 10. 14:24
URI: http://publicatio.bibl.u-szeged.hu/id/eprint/16068

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